English
Spain
Rusia
Italy
ChinaSSVMUN5312DW1T2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SSVMUN5312DW1T2G
BESCHREIBUNG
TRANS PREBIAS 1NPN 1PNP 50V SC88
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
22kOhms
Resistor - Emitter Base (R2)
22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
187mW
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
SC-88/SC70-6/SOT-363
Base Product Number
SSVMUN5312
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-SSVMUN5312DW1T2G-OS
ONSONSSSVMUN5312DW1T2G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi SSVMUN5312DW1T2G
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 1/Feb/2021)
PCN Design/Specification
1(Green Compound Update 04/Mar/2015)
PCN Assembly/Origin
1(Bond Wire 15/Feb/2019)
Menge Preis
-
Stellvertreter
Teil Nr. : NSVMUN5312DW1T2G
Hersteller. : onsemi
Verfügbare Menge. : 3,000
Einzelpreis. : $0.32000
Ersatztyp. : Similar
Verfügbare Menge. : 3,000
Einzelpreis. : $0.32000
Ersatztyp. : Similar