Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NTB5605PT4G
BESCHREIBUNG
MOSFET P-CH 60V 18.5A D2PAK
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 18.5A (Ta) 88W (Tc) Surface Mount D2PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTB5605PT4G Models
STANDARDPAKET
800

Technische Daten

Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1190 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
NTB5605

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2832-NTB5605PT4G
NTB5605PT4GOSDKR
NTB5605PT4G-ND
NTB5605PT4GOSTR
NTB5605PT4GOSCT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTB5605PT4G

Dokumente und Medien

Datasheets
1(NTB5605(P))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 7/Apr/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(TMOS7 Wafer Fab Expansion 04/Dec/2013)
HTML Datasheet
1(NTB5605(P))
EDA Models
1(NTB5605PT4G Models)

Menge Preis

-

Stellvertreter

Teil Nr. : NTBV5605T4G
Hersteller. : onsemi
Verfügbare Menge. : 1
Einzelpreis. : $1.54000
Ersatztyp. : Parametric Equivalent
Teil Nr. : IRF5210STRLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,967
Einzelpreis. : $2.93000
Ersatztyp. : Similar
Teil Nr. : RSJ250P10TL
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 2,444
Einzelpreis. : $2.76000
Ersatztyp. : Similar