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ChinaPHB38N02LT,118
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHB38N02LT,118
BESCHREIBUNG
MOSFET N-CH 20V 44.7A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 44.7A (Tc) 57.6W (Tc) Surface Mount D2PAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
44.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 5V
Rds On (Max) @ Id, Vgs
16mOhm @ 25A, 5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15.1 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
57.6W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
PHB38
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PHB38N02LT118
PHB38N02LT /T3
934057586118
568-2191-1
568-2191-2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHB38N02LT,118
Dokumente und Medien
Datasheets
1(PHB,PHD38N02LT)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHD38N02LT)
Menge Preis
-
Stellvertreter
-