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ChinaFQB17N08TM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQB17N08TM
BESCHREIBUNG
MOSFET N-CH 80V 16.5A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 16.5A (Tc) 3.13W (Ta), 65W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQB17N08TM Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
115mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 65W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB17N08TM
Dokumente und Medien
Datasheets
1(FQB17N08, FQI17N08)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQB17N08, FQI17N08)
EDA Models
1(FQB17N08TM Models)
Menge Preis
-
Stellvertreter
-