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China2SK2963(TE12L,F)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK2963(TE12L,F)
BESCHREIBUNG
MOSFET N-CH 100V 1A PW-MINI
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
700mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
6.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MINI
Package / Case
TO-243AA
Base Product Number
2SK2963
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2SK2963DKR
2SK2963 (TE12L,F)
2SK2963FCT
2SK2963DKR-ND
2SK2963TE12LF
2SK2963(TE12L)-NDR
2SK2963FDKR
2SK2963FTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SK2963(TE12L,F)
Dokumente und Medien
Datasheets
()
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
HTML Datasheet
()
Product Drawings
1(2SK2549, 2SK2963 Top)
Menge Preis
-
Stellvertreter
-