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ChinaAUIRF7799L2TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRF7799L2TR
BESCHREIBUNG
MOSFET N-CH 250V 375A DIRECTFT
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 375A (Tc) 4.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
68
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
375A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
38mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6714 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
4.3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric L8
Package / Case
DirectFET™ Isometric L8
Umweltverträgliche Exportklassifikationen
HTSUS
0000.00.0000
Andere Namen
INFIRFAUIRF7799L2TR
2156-AUIRF7799L2TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier AUIRF7799L2TR
Dokumente und Medien
Datasheets
1(AUIRF7799L2TR Datasheet)
Menge Preis
QUANTITÄT: 68
Einzelpreis: $4.46
Verpackung: Bulk
MinMultiplikator: 68
Verpackung: Bulk
MinMultiplikator: 68
Stellvertreter
-