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TEILNUMMER DES HERSTELLERS
ZVN4306AVSTZ
BESCHREIBUNG
MOSFET N-CH 60V 1.1A E-LINE
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole E-Line (TO-92 compatible)
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
E-Line (TO-92 compatible)
Package / Case
E-Line-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated ZVN4306AVSTZ
Dokumente und Medien
Datasheets
1(ZVN4306AV)
Environmental Information
1(Diodes Environmental Compliance Cert)
HTML Datasheet
1(ZVN4306AV)
Menge Preis
-
Stellvertreter
-