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ChinaFQA9N90-F109
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA9N90-F109
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 8
DETAILIERTE BESCHREIBUNG
N-Channel 900 V 8.6A (Tc) 240W (Tc) Through Hole TO-3PN
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
117
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA9
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FQA9N90-F109
ONSFSCFQA9N90-F109
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA9N90-F109
Dokumente und Medien
Datasheets
1(FQA9N90-F109 Datasheet)
Menge Preis
QUANTITÄT: 117
Einzelpreis: $2.57
Verpackung: Bulk
MinMultiplikator: 117
Verpackung: Bulk
MinMultiplikator: 117
Stellvertreter
-