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ChinaAUIRF7665S2TR
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AUIRF7665S2TR
BESCHREIBUNG
MOSFET N-CH 100V 4.1A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id
5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
515 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET SB
Package / Case
DirectFET™ Isometric SB
Base Product Number
AUIRF7665
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001519440
2156-AUIRF7665S2TR-448
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF7665S2TR
Dokumente und Medien
Datasheets
1(AUIRF7665S2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF7665S2TR(1))
Menge Preis
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Stellvertreter
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