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China2SA1380E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SA1380E
BESCHREIBUNG
TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 200 V 100 mA 150MHz 1.2 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,210
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 10V
Power - Max
1.2 W
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SA1380E
ONSONS2SA1380E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SA1380E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1210
Einzelpreis: $0.25
Verpackung: Bulk
MinMultiplikator: 1210
Verpackung: Bulk
MinMultiplikator: 1210
Stellvertreter
-