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ChinaFQI6N60CTU
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TEILNUMMER DES HERSTELLERS
FQI6N60CTU
BESCHREIBUNG
MOSFET N-CH 600V 5.5A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 5.5A (Tc) 125W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQI6N60CTU Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI6
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI6N60CTU
Dokumente und Medien
Datasheets
1(FQB6N60C, FQI6N60C)
Environmental Information
()
PCN Design/Specification
1(Passivation Material 26/June/2007)
HTML Datasheet
1(FQB6N60C, FQI6N60C)
EDA Models
1(FQI6N60CTU Models)
Menge Preis
-
Stellvertreter
Teil Nr. : STI4N62K3
Hersteller. : STMicroelectronics
Verfügbare Menge. : 0
Einzelpreis. : $0.51655
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.51655
Ersatztyp. : Similar