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ChinaS72XS256RE0AHBHH0
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TEILNUMMER DES HERSTELLERS
S72XS256RE0AHBHH0
BESCHREIBUNG
IC FLASH RAM 256MBIT PAR 133FBGA
DETAILIERTE BESCHREIBUNG
FLASH, DRAM Memory IC 256Mbit (FLASH), 256Mbit (DDR DRAM) Parallel 108 MHz 133-FBGA (8x8)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
S72XS256RE0AHBHH0 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
XS-R
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile, Volatile
Memory Format
FLASH, RAM
Technology
FLASH, DRAM
Memory Size
256Mbit (FLASH), 256Mbit (DDR DRAM)
Memory Organization
-
Memory Interface
Parallel
Clock Frequency
108 MHz
Write Cycle Time - Word, Page
-
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
133-VFBGA
Supplier Device Package
133-FBGA (8x8)
Base Product Number
S72XS256
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B1A
HTSUS
8542.32.0071
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Infineon Technologies S72XS256RE0AHBHH0
Dokumente und Medien
Environmental Information
1(RoHS Certificate)
PCN Obsolescence/ EOL
1(Mult Dev EOL 20/Oct/2020)
PCN Design/Specification
1(Mult Device Serial No Mark 26/Sep/2017)
PCN Packaging
()
EDA Models
1(S72XS256RE0AHBHH0 Models)
Menge Preis
-
Stellvertreter
-