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ChinaFDMC8854
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDMC8854
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 1
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 15A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
447
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
57 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3405 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-MLP (3.3x3.3)
Package / Case
8-PowerWDFN
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
ONSFSCFDMC8854
2156-FDMC8854
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMC8854
Dokumente und Medien
Datasheets
1(FDMC8854 Datasheet)
Menge Preis
QUANTITÄT: 447
Einzelpreis: $0.67
Verpackung: Bulk
MinMultiplikator: 447
Verpackung: Bulk
MinMultiplikator: 447
Stellvertreter
-