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ChinaFDA16N50LDTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDA16N50LDTU
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, N
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 16.5A (Tc) 205W (Tc) Through Hole TO-3PN (L-Forming)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
190
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1945 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
205W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN (L-Forming)
Package / Case
TO-3P-3, SC-65-3 (Formed Leads)
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FDA16N50LDTU
FAIFSCFDA16N50LDTU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDA16N50LDTU
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 190
Einzelpreis: $1.58
Verpackung: Bulk
MinMultiplikator: 190
Verpackung: Bulk
MinMultiplikator: 190
Stellvertreter
-