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China2N6792TX
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N6792TX
BESCHREIBUNG
2A, 400V, 1.8OHM, N-CHANNEL
DETAILIERTE BESCHREIBUNG
N-Channel 400 V 2A (Tc) 20W (Tc) Through Hole TO-205AF (TO-39)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
36
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHAR2N6792TX
2156-2N6792TX
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation 2N6792TX
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 36
Einzelpreis: $8.48
Verpackung: Bulk
MinMultiplikator: 36
Verpackung: Bulk
MinMultiplikator: 36
Stellvertreter
-