English
Spain
Rusia
Italy
ChinaTW070J120B,S1Q
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TW070J120B,S1Q
BESCHREIBUNG
SICFET N-CH 1200V 36A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 36A (Tc) 272W (Tc) Through Hole TO-3P(N)
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
15 Weeks
EDACAD-MODELL
TW070J120B,S1Q Models
STANDARDPAKET
25
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id
5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 20 V
Vgs (Max)
±25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
272W (Tc)
Operating Temperature
-55°C ~ 175°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3
Base Product Number
TW070J120
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TW070J120B,S1Q
Dokumente und Medien
Datasheets
1(TW070J120B)
Video File
1(SiC FET | Datasheet Preview)
Featured Product
1(TW070J120B SiC MOSFET)
EDA Models
1(TW070J120B,S1Q Models)
Menge Preis
QUANTITÄT: 100
Einzelpreis: $24.24
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 25
Einzelpreis: $25.856
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $31.19
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-