Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
147A (Tc)
Rds On (Max) @ Id, Vgs
17mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
2.4V @ 20mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
322nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
5600pF @ 1000V
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP6-P
Base Product Number
APTMC120