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TEILNUMMER DES HERSTELLERS
ZVN4210GTC
BESCHREIBUNG
MOSFET N-CH 100V 800MA SOT223
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 800mA (Ta) 2W (Ta) Surface Mount SOT-223-3
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-3
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated ZVN4210GTC
Dokumente und Medien
Datasheets
1(ZVN4210GTC)
Environmental Information
1(Diodes Environmental Compliance Cert)
Menge Preis
-
Stellvertreter
-