Mfr
GeneSiC Semiconductor
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
750 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
-
Power Dissipation (Max)
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA