English
Spain
Rusia
Italy
ChinaHGTD7N60C3S9A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HGTD7N60C3S9A
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT 600 V 14 A 60 W Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
249
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
14 A
Current - Collector Pulsed (Icm)
56 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 7A
Power - Max
60 W
Switching Energy
165µJ (on), 600µJ (off)
Input Type
Standard
Gate Charge
23 nC
Td (on/off) @ 25°C
-
Test Condition
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252 (DPAK)
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HGTD7N60C3S9A
FAIFSCHGTD7N60C3S9A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor HGTD7N60C3S9A
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 249
Einzelpreis: $1.22
Verpackung: Bulk
MinMultiplikator: 249
Verpackung: Bulk
MinMultiplikator: 249
Stellvertreter
-