Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
FCU600N65S3R0
BESCHREIBUNG
MOSFET N-CH 650V 6A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 6A (Tc) 54W (Tc) Through Hole IPAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75

Technische Daten

Mfr
onsemi
Series
SuperFET® III
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
465 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
FCU600

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

FCU600N65S3R0OS
2156-FCU600N65S3R0-488
FCU600N65S3R0-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCU600N65S3R0

Dokumente und Medien

Datasheets
1(FCU600N65S3R0)
Environmental Information
()
Featured Product
1(650 V, SuperFET® III MOSFETs)
PCN Obsolescence/ EOL
1(Mult Dev EOL 02/Oct/2023)
PCN Design/Specification
1(SuperFet Datasheet Chg 30/Jul/2019)
PCN Assembly/Origin
1(Assembly Change 28/May/2023)
HTML Datasheet
1(FCU600N65S3R0)

Menge Preis

QUANTITÄT: 100
Einzelpreis: $1.1549
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $1.451
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $1.75
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

Teil Nr. : IXTU8N70X2
Hersteller. : IXYS
Verfügbare Menge. : 64
Einzelpreis. : $3.99000
Ersatztyp. : Similar