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ChinaFF150R12RT4HOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FF150R12RT4HOSA1
BESCHREIBUNG
IGBT MOD 1200V 150A 790W
DETAILIERTE BESCHREIBUNG
IGBT Module Trench Field Stop Half Bridge 1200 V 150 A 790 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
C
Package
Tray
Product Status
Last Time Buy
IGBT Type
Trench Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
150 A
Power - Max
790 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Current - Collector Cutoff (Max)
1 mA
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
FF150R12R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-FF150R12RT4HOSA1
FF150R12RT4-ND
FF150R12RT4
FF150R12RT4HOSA1-ND
SP000624908
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies FF150R12RT4HOSA1
Dokumente und Medien
Datasheets
1(FF150R12RT4)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
PCN Design/Specification
1(Mult Dev Plating 16/Dec/2022)
HTML Datasheet
1(FF150R12RT4)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $104.995
Verpackung: Tray
MinMultiplikator: 10
Verpackung: Tray
MinMultiplikator: 10
Stellvertreter
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