English
Spain
Rusia
Italy
ChinaBSP110,115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP110,115
BESCHREIBUNG
MOSFET N-CH 100V 520MA SOT223
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 520mA (Tc) 6.25W (Tc) Surface Mount SOT-223
HERSTELLER
Nexperia USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
BSP110,115 Models
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
520mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
10Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id
2V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
40 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
6.25W (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
568-6812-2
568-6812-1
934000600115
BSP110 T/R
BSP110 T/R-ND
BSP110,115-ND
BSP110115
568-6812-6
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. BSP110,115
Dokumente und Medien
Datasheets
1(BSP110)
PCN Obsolescence/ EOL
1(Multiple Devices 05/Jul/2015)
PCN Design/Specification
1(Resin Hardener 02/Jul/2013)
PCN Packaging
()
HTML Datasheet
1(BSP110)
EDA Models
1(BSP110,115 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FDT1600N10ALZ
Hersteller. : onsemi
Verfügbare Menge. : 6,406
Einzelpreis. : $0.76000
Ersatztyp. : Similar
Verfügbare Menge. : 6,406
Einzelpreis. : $0.76000
Ersatztyp. : Similar