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ChinaBSS225L6327HTSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS225L6327HTSA1
BESCHREIBUNG
MOSFET N-CH 600V 90MA SOT89
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 90mA (Ta) 1W (Ta) Surface Mount PG-SOT89
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
90mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
45Ohm @ 90mA, 10V
Vgs(th) (Max) @ Id
2.3V @ 94µA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
131 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT89
Package / Case
TO-243AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSS225L6327HTSA1TR
BSS225L6327XT
BSS225 L6327
SP000095776
BSS225 L6327-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS225L6327HTSA1
Dokumente und Medien
Datasheets
1(BSS225)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSS225)
Menge Preis
-
Stellvertreter
Teil Nr. : BSS225H6327FTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,790
Einzelpreis. : $0.63000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 2,790
Einzelpreis. : $0.63000
Ersatztyp. : Parametric Equivalent
Teil Nr. : BSS225H6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Parametric Equivalent