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ChinaFQD20N06LETM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQD20N06LETM
BESCHREIBUNG
MOSFET N-CH 60V 17.2A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 17.2A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
888
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
17.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
665 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQD20N06LETM
FAIFSCFQD20N06LETM
2156-FQD20N06LETM-FSTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQD20N06LETM
Dokumente und Medien
Datasheets
1(FQD20N06LETM)
Menge Preis
QUANTITÄT: 888
Einzelpreis: $0.34
Verpackung: Bulk
MinMultiplikator: 888
Verpackung: Bulk
MinMultiplikator: 888
Stellvertreter
-