English
Spain
Rusia
Italy
ChinaFQB5N60CTM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQB5N60CTM
BESCHREIBUNG
MOSFET N-CH 600V 4.5A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 4.5A (Tc) 3.13W (Ta), 100W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQB5N60CTM Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 100W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
FQB5
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQB5N60CTM
Dokumente und Medien
Datasheets
1(FQB, FQI5N60C.)
Environmental Information
()
PCN Design/Specification
1(Passivation Material 26/June/2007)
HTML Datasheet
1(FQB, FQI5N60C.)
EDA Models
1(FQB5N60CTM Models)
Menge Preis
-
Stellvertreter
Teil Nr. : IRFBC30SPBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $1.52069
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $1.52069
Ersatztyp. : Similar
Teil Nr. : STB4NK60ZT4
Hersteller. : STMicroelectronics
Verfügbare Menge. : 4,379
Einzelpreis. : $1.93000
Ersatztyp. : Similar
Verfügbare Menge. : 4,379
Einzelpreis. : $1.93000
Ersatztyp. : Similar