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China2SA1253T-SPA-ON
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SA1253T-SPA-ON
BESCHREIBUNG
PNP EPITAXIAL PLANAR SILICON
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 250MHz Through Hole 3-SPA
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,664
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA, 5V
Frequency - Transition
250MHz
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
3-SPA
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
HTSUS
0000.00.0000
Andere Namen
2156-2SA1253T-SPA-ON
ONSONS2SA1253T-SPA
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SA1253T-SPA-ON
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 2664
Einzelpreis: $0.11
Verpackung: Bulk
MinMultiplikator: 2664
Verpackung: Bulk
MinMultiplikator: 2664
Stellvertreter
-