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ChinaSI8809EDB-T2-E1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI8809EDB-T2-E1
BESCHREIBUNG
MOSFET P-CH 20V 1.9A MICROFOOT
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 1.94 (Ta) 500mW (Ta) Surface Mount 4-Microfoot
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.94 (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
90mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 8 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-Microfoot
Package / Case
4-XFBGA
Base Product Number
SI8809
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI8809EDB-T2-E1
Dokumente und Medien
Datasheets
1(SI8809EDB-T2-E1)
Environmental Information
()
HTML Datasheet
1(SI8809EDB-T2-E1)
Menge Preis
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Stellvertreter
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