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ChinaNSS20201MR6T1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NSS20201MR6T1G
BESCHREIBUNG
TRANS NPN 20V 2A 6TSOP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 20 V 2 A 200MHz 460 mW Surface Mount 6-TSOP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NSS20201MR6T1G Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
20 V
Vce Saturation (Max) @ Ib, Ic
150mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A, 5V
Power - Max
460 mW
Frequency - Transition
200MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOP
Base Product Number
NSS20201
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
NSS20201MR6T1GOSCT
2832-NSS20201MR6T1GTR
NSS20201MR6T1GOSTR
=NSS20201MR6T1GOSCT-ND
2156-NSS20201MR6T1G-OS
NSS20201MR6T1G-ND
NSS2021MR6T1GOSDKR
ONSONSNSS20201MR6T1G
NSS20201MR6T1GOSDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi NSS20201MR6T1G
Dokumente und Medien
Datasheets
1(NSS20201MR6T1G)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 03/Jul/2023)
PCN Design/Specification
1(Copper Wire 08/Jun/2009)
PCN Assembly/Origin
1(Mult Devices 04/Aug/2017)
HTML Datasheet
1(NSS20201MR6T1G)
EDA Models
1(NSS20201MR6T1G Models)
Menge Preis
-
Stellvertreter
-