Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
RN1103MFV,L3F
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A VESM
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
RN1103MFV,L3F Models
STANDARDPAKET
8,000

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1103

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

RN1103MFV,L3F(T
RN1103MFV,L3F(B
RN1103MFVL3FTR
RN1103MFVL3FDKR
RN1103MFVL3FCT
RN1103MFVL3F

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1103MFV,L3F

Dokumente und Medien

Datasheets
1(RN1101-6MFB)
PCN Packaging
1(Marking Chg 08/Feb/2016)
EDA Models
1(RN1103MFV,L3F Models)

Menge Preis

QUANTITÄT: 100
Einzelpreis: $0.0667
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $0.124
Verpackung: Cut Tape (CT)
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $0.17
Verpackung: Cut Tape (CT)
MinMultiplikator: 1

Stellvertreter

Teil Nr. : DTC124EM3T5G
Hersteller. : onsemi
Verfügbare Menge. : 7,315
Einzelpreis. : $0.35000
Ersatztyp. : Similar
Teil Nr. : NSBC124EF3T5G
Hersteller. : onsemi
Verfügbare Menge. : 4,316
Einzelpreis. : $0.36000
Ersatztyp. : Similar