English
Spain
Rusia
Italy
ChinaIXYQ30N65B3D1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXYQ30N65B3D1
BESCHREIBUNG
DISC IGBT XPT-GENX3 TO-3P (3)
DETAILIERTE BESCHREIBUNG
IGBT PT 650 V 70 A 270 W Through Hole TO-3P
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
IXYS
Series
GenX3™, XPT™
Package
Tube
Product Status
Obsolete
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
70 A
Current - Collector Pulsed (Icm)
160 A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 30A
Power - Max
270 W
Switching Energy
830µJ (on), 640µJ (off)
Input Type
Standard
Gate Charge
45 nC
Td (on/off) @ 25°C
17ns/87ns
Test Condition
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)
38 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
IXYQ30
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXYQ30N65B3D1
Dokumente und Medien
Datasheets
1(IXYx30N65B3D1)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult Dev obs 15/Feb/2023)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
Menge Preis
-
Stellvertreter
-