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ChinaFQPF630
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF630
BESCHREIBUNG
MOSFET N-CH 200V 6.3A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 6.3A (Tc) 38W (Tc) Through Hole TO-220F-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQPF630 Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
400mOhm @ 3.15A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF6
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FQPF630-ND
2832-FQPF630
FQPF630OS
2156-FQPF630-488
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF630
Dokumente und Medien
Datasheets
1(FQPF630)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(QFET FAB 02-Mar-2022)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FQPF630 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : RCX080N25
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 246
Einzelpreis. : $1.25000
Ersatztyp. : Direct
Verfügbare Menge. : 246
Einzelpreis. : $1.25000
Ersatztyp. : Direct