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ChinaSCTH70N120G2V-7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SCTH70N120G2V-7
BESCHREIBUNG
SILICON CARBIDE POWER MOSFET 120
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
52 Weeks
EDACAD-MODELL
SCTH70N120G2V-7 Models
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3540 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
469W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-SCTH70N120G2V-7DKR
497-SCTH70N120G2V-7TR
497-SCTH70N120G2V-7CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTH70N120G2V-7
Dokumente und Medien
Datasheets
1(SCTH70N120G2V-7)
EDA Models
1(SCTH70N120G2V-7 Models)
Menge Preis
QUANTITÄT: 1000
Einzelpreis: $29.30616
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 1000
Stellvertreter
-