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ChinaSI4967DY-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4967DY-T1-E3
BESCHREIBUNG
MOSFET 2P-CH 12V 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 12V 2W Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
23mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
SI4967
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI4967DY-T1-E3
Dokumente und Medien
PCN Obsolescence/ EOL
1(SIL-0632014 16/Apr/2014)
HTML Datasheet
1(SI4967DY)
Menge Preis
-
Stellvertreter
Teil Nr. : SI9933CDY-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 27,578
Einzelpreis. : $0.61000
Ersatztyp. : Similar
Verfügbare Menge. : 27,578
Einzelpreis. : $0.61000
Ersatztyp. : Similar