Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
NDH832P
BESCHREIBUNG
MOSFET P-CH 20V 4.2A SUPERSOT8
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4.2A (Ta) 1.8W (Ta) Surface Mount SuperSOT™-8
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
807

Technische Daten

Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 4.5 V
Vgs (Max)
-8V
Input Capacitance (Ciss) (Max) @ Vds
1000 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-8
Package / Case
8-TSOP (0.130", 3.30mm Width)

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095

Andere Namen

2156-NDH832P-FSTR-ND
FAIFSCNDH832P
2156-NDH832P

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor NDH832P

Dokumente und Medien

Datasheets
1(NDH832P)

Menge Preis

QUANTITÄT: 807
Einzelpreis: $0.37
Verpackung: Bulk
MinMultiplikator: 807

Stellvertreter

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