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China2SD1725T
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TEILNUMMER DES HERSTELLERS
2SD1725T
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1.2 W Through Hole TO-126LP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
701
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 200mA, 2A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA, 5V
Power - Max
1.2 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126LP
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
ONSONS2SD1725T
2156-2SD1725T
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1725T
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 701
Einzelpreis: $0.43
Verpackung: Bulk
MinMultiplikator: 701
Verpackung: Bulk
MinMultiplikator: 701
Stellvertreter
-