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ChinaPHD45N03LTA,118
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHD45N03LTA,118
BESCHREIBUNG
MOSFET N-CH 25V 40A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 40A (Tc) 65W (Tc) Surface Mount DPAK
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
3.5V, 10V
Rds On (Max) @ Id, Vgs
21mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
PHD45
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
PHD45N03LTA /T3
PHD45N03LTA /T3-ND
934056763118
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHD45N03LTA,118
Dokumente und Medien
Datasheets
1(PHB,PHD,PHP45N03LTA)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHD,PHP45N03LTA)
Menge Preis
-
Stellvertreter
-