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ChinaFQPF9P25YDTU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF9P25YDTU
BESCHREIBUNG
MOSFET P-CH 250V 6A TO220F-3
DETAILIERTE BESCHREIBUNG
P-Channel 250 V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
620mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3 (Y-Forming)
Package / Case
TO-220-3 Full Pack, Formed Leads
Base Product Number
FQPF9
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2832-FQPF9P25YDTU-488
2832-FQPF9P25YDTU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF9P25YDTU
Dokumente und Medien
Datasheets
1(FQPF9P25YDTU)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Menge Preis
-
Stellvertreter
Teil Nr. : FQPF9P25YDTU
Hersteller. : onsemi
Verfügbare Menge. : 5,600
Einzelpreis. : $0.68430
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 5,600
Einzelpreis. : $0.68430
Ersatztyp. : Parametric Equivalent