Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFR9N20DTRPBF
BESCHREIBUNG
MOSFET N-CH 200V 9.4A DPAK
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 9.4A (Tc) 86W (Tc) Surface Mount TO-252AA (DPAK)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,000

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
86W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
-

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

2156-IRFR9N20DTRPBFTR
IRFR9N20DTRPBFDKR
IRFR9N20DTRPBF-ND
IRFR9N20DTRPBFTR
SP001552256
IRFR9N20DTRPBFCT

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR9N20DTRPBF

Dokumente und Medien

Datasheets
1(IRFR9N20D, IRFU9N20D)
Other Related Documents
()
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRFR9N20D, IRFU9N20D)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFR4620TRLPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 19,785
Einzelpreis. : $1.66000
Ersatztyp. : Similar