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ChinaMII100-12A3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MII100-12A3
BESCHREIBUNG
IGBT MODULE 1200V 135A 560W Y4M5
DETAILIERTE BESCHREIBUNG
IGBT Module NPT Half Bridge 1200 V 135 A 560 W Chassis Mount Y4-M5
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
135 A
Power - Max
560 W
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 75A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
5.5 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Y4-M5
Supplier Device Package
Y4-M5
Base Product Number
MII100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/IXYS MII100-12A3
Dokumente und Medien
Datasheets
1(MII100-12A3)
PCN Obsolescence/ EOL
()
HTML Datasheet
1(MII100-12A3)
Menge Preis
-
Stellvertreter
-