Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF9240
BESCHREIBUNG
HEXFET POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-204AA (TO-3)
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
54

Technische Daten

Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
580mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-204AA (TO-3)
Package / Case
TO-204AA, TO-3

Umweltverträgliche Exportklassifikationen

ECCN
EAR99
HTSUS
8542.39.0001

Andere Namen

IRFIRFIRF9240
2156-IRF9240

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF9240

Dokumente und Medien

Datasheets
1(IRF9240 Datasheet)

Menge Preis

QUANTITÄT: 54
Einzelpreis: $5.64
Verpackung: Bulk
MinMultiplikator: 54

Stellvertreter

-