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ChinaRJK5014DPP-E0#T2
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TEILNUMMER DES HERSTELLERS
RJK5014DPP-E0#T2
BESCHREIBUNG
MOSFET N-CH 500V 19A TO220FP
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 19A (Ta) 35W (Tc) Through Hole TO-220FP
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
RJK5014DPP-E0#T2 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
390mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK5014DPP-E0#T2
Dokumente und Medien
Datasheets
1(RJK5014DPP-E0#T2)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
HTML Datasheet
1(RJK5014DPP-E0#T2)
EDA Models
1(RJK5014DPP-E0#T2 Models)
Menge Preis
-
Stellvertreter
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