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TEILNUMMER DES HERSTELLERS
2SD1230
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20MHz 2.5 W Through Hole TO-3PB
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
323
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 8mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
1500 @ 4A, 3V
Power - Max
2.5 W
Frequency - Transition
20MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-2SD1230
ONSONS2SD1230
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1230
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 323
Einzelpreis: $1.01
Verpackung: Bulk
MinMultiplikator: 323
Verpackung: Bulk
MinMultiplikator: 323
Stellvertreter
-