Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPP60R022S7XKSA1
BESCHREIBUNG
MOSFET N-CH 600V 23A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 23A (Tc) 390W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
20 Weeks
EDACAD-MODELL
IPP60R022S7XKSA1 Models
STANDARDPAKET
50

Technische Daten

Mfr
Infineon Technologies
Series
CoolMOS™S7
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
12V
Rds On (Max) @ Id, Vgs
22mOhm @ 23A, 12V
Vgs(th) (Max) @ Id
4.5V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 12 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5639 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
390W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP60R022

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

448-IPP60R022S7XKSA1
SP003393028

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP60R022S7XKSA1

Dokumente und Medien

Datasheets
1(IPP60R022S7)
Environmental Information
1(RoHS Certificate)
EDA Models
1(IPP60R022S7XKSA1 Models)

Menge Preis

QUANTITÄT: 1000
Einzelpreis: $6.99174
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 500
Einzelpreis: $7.62258
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $8.4111
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 50
Einzelpreis: $8.9368
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $11.04
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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