Product Status
Not For New Designs
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Gate Charge (Qg) (Max) @ Vgs
27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
6-SMD, No Lead
Supplier Device Package
6-CSP (1.77x3.54)
Base Product Number
EFC6612