English
Spain
Rusia
Italy
ChinaSPP10N10
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPP10N10
BESCHREIBUNG
MOSFET N-CH 100V 10.3A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 10.3A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id
4V @ 21µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
426 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
SPP10N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFSPP10N10
2156-SPP10N10-IT
SPP10N10X
SP000013844
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP10N10
Dokumente und Medien
Datasheets
1(SP(I,P,B)10N10)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SP(I,P,B)10N10)
Menge Preis
-
Stellvertreter
Teil Nr. : IRF540ZPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 38,671
Einzelpreis. : $1.30000
Ersatztyp. : Similar
Verfügbare Menge. : 38,671
Einzelpreis. : $1.30000
Ersatztyp. : Similar
Teil Nr. : IRL530PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 10,257
Einzelpreis. : $1.62000
Ersatztyp. : Similar
Verfügbare Menge. : 10,257
Einzelpreis. : $1.62000
Ersatztyp. : Similar