Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRFH8337TR2PBF
BESCHREIBUNG
MOSFET N-CH 30V 9.7A 5X6 PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 12A (Ta), 35A (Tc) Surface Mount PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400

Technische Daten

Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs
12.8mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRFH8337TR2PBFDKR
IRFH8337TR2PBFCT
IRFH8337TR2PBFTR
SP001551966

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH8337TR2PBF

Dokumente und Medien

Datasheets
1(IRFH8337TR2PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFH8337TR2PbF)
Simulation Models
1(IRFH8337TR2PBF Saber Model)

Menge Preis

-

Stellvertreter

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Ersatztyp. : Similar