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ChinaIRF6645
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6645
BESCHREIBUNG
MOSFET N-CH 100V 5.7A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 5.7A (Ta), 25A (Tc) 3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SJ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
35mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id
4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SJ
Package / Case
DirectFET™ Isometric SJ
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6645
Dokumente und Medien
Datasheets
1(IRF6645(TR)PbF)
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HTML Datasheet
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Menge Preis
-
Stellvertreter
Teil Nr. : BUK9637-100E,118
Hersteller. : Nexperia USA Inc.
Verfügbare Menge. : 4,754
Einzelpreis. : $1.66000
Ersatztyp. : Similar
Verfügbare Menge. : 4,754
Einzelpreis. : $1.66000
Ersatztyp. : Similar