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ChinaN0600N-S17-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
N0600N-S17-AY
BESCHREIBUNG
MOSFET N-CH 60V 30A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 30A (Ta) 2W (Ta), 20W (Tc) Through Hole TO-220
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
580
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Rds On (Max) @ Id, Vgs
36mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
29.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1380 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3 Isolated Tab
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-N0600N-S17-AY-RE
RENRNSN0600N-S17-AY
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation N0600N-S17-AY
Dokumente und Medien
Datasheets
1(N0600N-S17-AY)
Menge Preis
QUANTITÄT: 580
Einzelpreis: $0.52
Verpackung: Tube
MinMultiplikator: 580
Verpackung: Tube
MinMultiplikator: 580
Stellvertreter
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