Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSO615CGHUMA1
BESCHREIBUNG
MOSFET N/P-CH 60V 3.1A/2A 8DSO
DETAILIERTE BESCHREIBUNG
Mosfet Array 60V 3.1A, 2A 2W Surface Mount PG-DSO-8
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3.1A, 2A
Rds On (Max) @ Id, Vgs
110mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Base Product Number
BSO615

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SP000216311
BSO615CGHUMA1CT
BSO615CINCT
BSO615CINCT-NDR
BSO615CGXT
BSO615CINTR-NDR
2156-BSO615CGHUMA1
BSO615CGHUMA1DKR
BSO615C G
BSO615CGHUMA1TR
BSO615CG
BSO615CINTR
BSO615CINDKR
BSO615CINDKR-ND
BSO615C
BSO615CGT
IFEINFBSO615CGHUMA1
BSO615C G-ND
BSO615CINTR-ND
BSO615CINCT-ND

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies BSO615CGHUMA1

Dokumente und Medien

Datasheets
1(BSO615C)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSO615C)
Simulation Models
1(OptiMOS™ Power MOSFET 60V Complementary Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : BSO615CGXUMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 15,587
Einzelpreis. : $1.66000
Ersatztyp. : Direct
Teil Nr. : DMC6040SSD-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 4,398
Einzelpreis. : $1.02000
Ersatztyp. : Similar